InAs/AlAsSb based quantum cascade detector

Thermal conductivity tensors of the cladding and active layers of antimonide infrared lasers and detectors

The in-plane and cross-plane thermal conductivities of the cladding layers and active quantum wells of interband cascade lasers and type-II superlattice infrared detector are measured by the 2-wire 3ω method. The layers investigated include InAs/AlSb superlattice cladding layers, InAs/GaInSb/InAs/AlSb W-active quantum wells, an InAs/GaSb superlattice absorber, an InAs/GaSb/AlSb M-structure, and...

Design and simulation of InGaAs/AlAsSb quantum cascade lasers for short wavelength emission

Correlating growth conditions with photoluminescence and lasing properties of mid-IR antimonide type II ‘‘W’’ structures

We explored the evolution of the photoluminescence ~PL! properties versus molecular beam epitaxy growth conditions for a series of type II ‘‘W’’ quantum well @InAs/GaInSb/InAs/AlAsSb# structures. The highest PL intensities are obtained when the quantum wells are grown in a temperature range between 487 and 507 °C. Cross-sectional scanning tunneling microscopy was used to explain the temperature...

Carrier leakage into the continuum in diagonal GaAs/Al0.15GaAs terahertz quantum cascade lasers

Articles you may be interested in λ ∼ 3.1 μ m room temperature InGaAs/AlAsSb/InP quantum cascade lasers Appl. Above room temperature operation of short wavelength (λ = 3.8 μ m) strain-compensated In 0.73 Ga 0.27 As – AlAs quantum-cascade lasers Appl. Lasing properties of GaAs/(Al,Ga)As quantum-cascade lasers as a function of injector doping density Appl.

Structural and optical properties of InAs/AlAsSb quantum dots with GaAs(Sb) cladding layers

We investigate the effect of GaAs1 xSbx cladding layer composition on the growth and properties of InAs self-assembled quantum dots surrounded by AlAs0.56Sb0.44 barriers. Lowering Sb-content in the GaAs1 xSbx improves the morphology of the InAs quantum dots and reduces cladding layer alloy fluctuations. The result is a dramatic increase in photoluminescence intensity from the InAs quantum dots,...